|
Sapphire Wafer / »çÆÄÀÌ¾î ¿þÀÌÆÛ |
|
Cat. No |
Model |
Description |
Unit |
Price (VATº°µµ) |
³³±â |
Àç°í |
ÁÖ¹®/°ßÀû |
|
W04-171-508 |
SW02S03 |
 Sapphire Wafer SSP 2`` / 380¡¾30§ / as-cut |
25/PK |
0¿ø |
0 Day |
0 |
¹®ÀÇ |
|
W04-171-514 |
SW03S03 |
 Sapphire Wafer SSP 3inch, 380¡¾30§, as-cut |
25/PK |
0¿ø |
0 Day |
0 |
¹®ÀÇ |
|
W04-171-520 |
SW04S04 |
 Sapphire Wafer SSP 4inch, 465¡¾30§, as-cut |
25/PK |
0¿ø |
0 Day |
0 |
¹®ÀÇ |
|
W04-171-526 |
QW02D04 |
 Sapphire Wafer DSP 2inch, 430¡¾30§, as-cut |
25/PK |
0¿ø |
0 Day |
0 |
¹®ÀÇ |
|
W04-171-532 |
QW03D04 |
 Sapphire Wafer DSP 3inch, 430¡¾30§, as-cut |
25/PK |
0¿ø |
0 Day |
0 |
¹®ÀÇ |
|
W04-171-538 |
QW04D05 |
 Sapphire Wafer DSP 4inch, 500¡¾30§, as-cut |
25/PK |
0¿ø |
0 Day |
0 |
¹®ÀÇ |
|
|
|
|
|
|
|
|
* Alumian(AL©üO©ý) °¡ 2300¡É À̻󿡼 ´Ü°áÁ¤ (Single Crystal) À¸·Î ¼ºÀåµÈ °áÁ¤Ã¼
* Application : GaN (3-5, 2-4Á·) Compounds, IR Detectors, High Tesuperconductors High Frequency Dielectric
* TTV (Total Thickness Variation) : ¡¾ 20§¡
* RA(10¡Ê), Orientation (<0-0-0-1> c-axis)
* Ư¼º :
¨ç ±Ø Àú¿Â¿¡¼ ÃÊ°í¿Â ±îÁö »óÅ º¯ÇÔ¾øÀÌ ¸Å¿ì ¾ÈÁ¤ÀûÀÓ
¨è °æµµ°¡ ¸Å¿ì ³ôÀ¸¸ç, »ê°ú ¾ËÄ«¸®¿¡ ¸Å¿ì °ÇÔ
¨é ºûÀÇ Åõ°ú¼ºÀÌ °¡Àå ³ôÀ½ (Index of Refraction : 1.769)
¨ê ¿ÀüµµÀ²ÀÌ ¸Å¿ì ¿ì¼öÇÔ
* ±Ô°Ý¿Ü Á¦Ç°Àº ¹®ÀÇ ¹Ù¶÷
SSP (Single Side Polishing)
Cat. No. |
Model |
Dia. |
Thicknes |
Orientation |
W04-171-508 |
QW02D03 |
2" |
380±30 § |
as - cut |
W04-171-514 |
QW03D03 |
3" |
380±30 § |
W04-171-520 |
QW04D05 |
4" |
465±30 § |
DSP (Double Side Polishing)
Cat. No. |
Model |
Dia. |
Thicknes |
Orientation |
W04-171-526 |
QW02D04 |
2" |
430±30 § |
as - cut |
W04-171-532 |
QW03D04 |
3" |
430±30 § |
W04-171-538 |
QW04D05 |
4" |
500±30 § |
|
|
|
|